Pre-switching non-linear region and delay time in the Cu0.15As0.35Se0.50 semiconducting glass
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference13 articles.
1. Amorphous materials — past, present and future
2. Reversible Electrical Switching Phenomena in Disordered Structures
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4. The formation process and the electrical nature of the lock-on filament in Ge0.09As0.20Te0.71 glass
5. Switching Phenomena in Cu-As-Se Glasses
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1. Memory Switching Characteristics in Amorphous Ga2Se3 Films;Journal of Electronic Materials;2008-02-05
2. Conduction mechanism in the off-state of thin Te48-yAs30+yGe10Si12films;Journal of Physics D: Applied Physics;2000-09-21
3. Refractive-index dispersion and the optical-absorption edge of wedge-shaped thin films of metal - chalcogenide glasses;Journal of Physics D: Applied Physics;1997-02-21
4. Switching effects in Se90 − x Sbx Bi10 thin films;Vacuum;1995-12
5. On the electrical conduction and current-controlled negative differential resistance with memory in bulk samples of glassy semiconductor Cu0.05As0.50Te0.45: NTC thermistor-type behaviour;Semiconductor Science and Technology;1988-11-01
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