The formation process and the electrical nature of the lock-on filament in Ge0.09As0.20Te0.71 glass
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference12 articles.
1. Reversible Electrical Switching Phenomena in Disordered Structures
2. Electric field-induced filament formation in AsTeGe glass
3. Electronic and structural properties of amorphous semiconductors;Fritzsche,1973
4. Switching in hydrogenated amorphous silicon
5. Thermal switching due to a local inhomogeneity existing between the electrode and the amorphous semiconductor
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1. Atomic configurations generation by a random method for glassy alloy Ge0.l4As0.43Te0.43;Journal of Materials Science;1988-05
2. On the growth and composition of conductive filaments on the surface of As–Se–Te bulk glassy semiconductors;Journal of Materials Research;1988-04
3. Structural and electrical properties of the glassy semiconductor system Cu-As-Te;Journal of Materials Science;1988-04
4. Study of the electrothermal switching effect in bulk glassy semiconductors by a computer simulation method;Journal of Materials Science;1987-12
5. Short-range order in some alloys of the Ge-As-Te semiconducting glassy system by X-ray diffraction;Journal of Materials Science;1987-12
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