On the effect of grain boundary segregation on electromigration driving force in thin metal films-Reference-Cited by-同舟云学术

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On the effect of grain boundary segregation on electromigration driving force in thin metal films

Published:1996-01 Issue:1-2 Volume:26 Page:65-68
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Glickman Evgeny,Molotskii Michele

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference27 articles.

1. Electromigration in metals

2. Thin films: interdiffusion and reactions;d'Heurle,1978

3. Ion conductivity in metals and semiconductors (electrotransport);Fiks,1969

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1. Peculiarities of doping of nanograined thermoelectric TiNiSn by 3d noble and transition metals;Intermetallics;2018-07

2. Micro-tension study of miniaturized Cu lines at variable temperatures;Acta Materialia;2015-06

3. Density functional theory study of the influence of segregation of S or Fe impurities on electromigration in nano-grained copper interconnects;Journal of Applied Physics;2015-05-21

4. Temperature dependent transition of intragranular plastic to intergranular brittle failure in electrodeposited Cu micro-tensile samples;Materials Science and Engineering: A;2014-11

5. Electromigration in electroplated Cu(Ag) alloy thin films investigated by means of single damascene Blech structures;Microelectronic Engineering;2009-12

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