On space-charge scattering in undoped n-type LPE gallium arsenide-Reference-Cited by-同舟云学术

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On space-charge scattering in undoped n-type LPE gallium arsenide

Published:1984-05 Issue:4 Volume:2 Page:313-314
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Weiying Shi,Haisheng Yu,Binglin Zhou,Yuanxi Zou (Yuanhsi Chou),Yaocheng Ren,Zhenxiu Chen

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference5 articles.

1. Proceedings of the International Conference on Semiconductors;Weisberg,1960

2. Electron mobility in AlxGa1−xAs

3. Surface and interface depletion corrections to free carrier-density determinations by hall measurements

4. Reassessment of space‐charge and central‐cell scattering contributions to GaAs electron mobility

5. High-Field Transport inn- Type GaAs

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chapter 1 III-V Compounds;Semiconductors and Semimetals;1988

2. Effect of baking on space-charge scattering in undoped n-type LPE GaAs;Materials Letters;1986-07

3. Characterization of undoped n-type LPE gallium arsenide by hall, photo-hall and PL measurements;Materials Letters;1985-07

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