On the location of the misfit dislocations in InGaAs/InP mbe single heterostructures
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference24 articles.
1. A high gain In0.53Ga0.47As/InP avalanche photodiode with no tunneling leakage current
2. 1.0–1.6 μm planar avalanche photodiode by LPE grown InP/InGaAs/InP DH structure
3. High-speed-response InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers
4. Planar In0.53Ga0.47As Avalanche Photodiodes with Guard-Ring Structure
5. New InGaAs/InP avalanche photodiode structure for the 1-1.6 µm wavelength region
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