Rational ligand design for enhanced carrier mobility in self-powered SWIR photodiodes based on colloidal InSb quantum dots-Reference-Cited by-同舟云学术

Rational ligand design for enhanced carrier mobility in self-powered SWIR photodiodes based on colloidal InSb quantum dots

Published:2024 Issue:5 Volume:9 Page:817-827
ISSN:2055-6756
Container-title:Nanoscale Horizons
language:en
Short-container-title:Nanoscale Horiz.

Author:

Chatterjee Subhashri¹²^ORCID,Nemoto Kazuhiro¹^ORCID,Sun Hong-Tao¹^ORCID,Shirahata Naoto¹²³⁴^ORCID

Affiliation:

1. Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047, Japan

2. Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo 060-0814, Japan

3. Department of Physics, Chuo University, 1-13-27 Kasuga, Bunkyo, Tokyo 112-8551, Japan

4. CNRS–Saint-Gobain–NIMS, IRL3629, Laboratory for Innovative Key Materials and Structures, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

Abstract

This study demonstrates selective ligand engineering of InSb colloidal quantum dots (CQD) for enhancing the figure of merit of self-powered short-wave infrared (SWIR) photodiodes.

Funder

Japan Society for the Promotion of Science

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NH/D4NH00038B

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