Evaluation of misfit dislocations in planar, zinc-diffused In0.53Ga0.47As pin photodiodes-Reference-Cited by-同舟云学术

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Evaluation of misfit dislocations in planar, zinc-diffused In0.53Ga0.47As pin photodiodes

Published:1983-04 Issue:5-6 Volume:1 Page:152-156
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Chin A.K.,Dutt B.V.,Trimmer W.S.,Zuber J.R.,Boone T.,Trapp K.D.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference26 articles.

1. Effect of dopants on transmission loss of low-OH-content optical fibres

2. Zero material dispersion in optical fibres

3. Planar In0.53Ga0.47As Avalanche Photodiodes with Guard-Ring Structure

4. New InGaAs/InP avalanche photodiode structure for the 1-1.6 µm wavelength region

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pseudomorphic Growth and Nucleation of Misfit Dislocations in the Epitaxial System (001) InP/In1−xGraxAs. I. Pseudomorphic Growth, Tetragonal Distortion, and Lattice Relaxation by Dislocation Nucleation;Physica Status Solidi (a);1989-04-16

2. Experimental study of misfit dislocations in InP-based heterostructures;Materials Letters;1989-02

3. On the location of the misfit dislocations in InGaAs/InP mbe single heterostructures;Materials Letters;1985-08

4. Failure mode analysis of planar zinc‐diffused In0.53Ga0.47Asp‐i‐nphotodiodes;Journal of Applied Physics;1984-03-15

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