Low resistivity aluminum nitride: carbon (AlN : C) films grown by metal organic chemical vapor deposition-Reference-Cited by-同舟云学术

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Low resistivity aluminum nitride: carbon (AlN : C) films grown by metal organic chemical vapor deposition

Published:1996-03 Issue:4-5 Volume:26 Page:223-226
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Wongchotigul K.,Chen N.,Zhang D.P.,Tang X.,Spencer M.G.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference4 articles.

1. Epitaxially grown AlN and its optical band gap

2. Ultraviolet electroluminescence in AlN

3. Proceedings of the 22nd Intern. Conf. on the Phys. of Semicon;Neugebauer,1994

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