Electrical characterization of high k-dielectrics for 4H-SiC MIS devices-Reference-Cited by-同舟云学术

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Electrical characterization of high k-dielectrics for 4H-SiC MIS devices

Published:2019-08 Issue: Volume:98 Page:55-58
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Khosa R.Y.,Chen J.T.,Winters M.,Pálsson K.,Karhu R.,Hassan J.,Rorsman N.,Sveinbjӧrnsson E.Ö.

Funder

SSF

Knut and Alice Wallenberg Foundation

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference32 articles.

1. Influence of oxidation temperature on the interfacial properties of n-type 4H-SiC MOS capacitors

2. Growth and surface analysis of SiO2 on 4H-SiC for MOS devices

3. Material science and device physics in SiC technology for high-voltage power devices

4. Hindawi Publishing Corporation Active and Passive Electronic Components;Nawaz,2015

5. Electrical characteristics of metal/AlN/n‐type 6H–SiC(0001) heterostructures

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1. Influence of Carbon Source on the Buffer Layer for 4H-SiC Homoepitaxial Growth;Materials;2024-05-29

2. Adhesion and electronic properties of 4H-SiC/α-Al2O3 interfaces with different terminations calculated via first-principles methods;Surfaces and Interfaces;2023-10

3. Effect of Enhanced Hole Transport on the Performance of Ni/Y₂O₃/n-4H-SiC Epilayer Radiation Detectors;IEEE Transactions on Nuclear Science;2023-09

4. Characterization of the slow-state traps in 4H–SiC P-type MOS capacitor by a preconditioning technique with high positive voltage stress;Micro and Nanostructures;2023-03

5. Investigation of Ni/Y2O3/n-4H-SiC metal-oxide-semiconductor structure for high-resolution radiation detection;Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXIV;2022-10-04

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