Improved junction properties of Au-n-GaSb Schottky diodes after chemical modification of GaSb surfaces-Reference-Cited by-同舟云学术

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Improved junction properties of Au-n-GaSb Schottky diodes after chemical modification of GaSb surfaces

Published:1990-11 Issue:4-5 Volume:10 Page:203-206
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Barman P.,Roy U.N.,Basu S.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference6 articles.

1. Effects of Cations on the Performance of the Photoanode in the n ‐ GaAs | K 2Se ‐ K 2Se2 ‐ KOH | C Semiconductor Liquid Junction Solar Cell

2. Improved Schottky barrier on n-InP by surface modification

3. Proceedings of the International Biennial Congress on Solar Energy;Ramprakash,1984

4. 11.5% solar conversion efficiency in the photocathodically protectedp‐InP/V3+‐V2+‐HCI/C semiconductor liquid junction cell

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2. Analysis of temperature-dependent I-V characteristics of the Au/n-GaSb Schottky diode;Materials Science in Semiconductor Processing;2021-08

3. The electrical characteristics of Ni/n-GaSb Schottky diode;Materials Science in Semiconductor Processing;2013-04

4. The physics and technology of gallium antimonide: An emerging optoelectronic material;Journal of Applied Physics;1997-05

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