Formation of self-aligned TiSi2 contacts to Si at low temperatures using TiCl4 and SiH4 with selective in-situ predeposition of SixGe1−x
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference18 articles.
1. Very low pressure chemical vapor deposition process for selective titanium silicide films
2. Selective titanium disilicide by low‐pressure chemical vapor deposition
3. Selective Silicide or Boride Film Formation by Reaction of Vapor Phase TiCl4 with Silicon or Boron
4. Selective deposition of TiSi2 on oxide patterned wafers using low pressure chemical vapor deposition
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2. Deposition and structure of chemically vapor deposited nanoscale Ti-Si islands on Si;Journal of Applied Physics;2004-11
3. Metal Silicides in CMOS Technology: Past, Present, and Future Trends;Critical Reviews in Solid State and Materials Sciences;2003-11
4. Effects of the Process Variable on Sputtered TiSi[sub x] Polycide Gate Electrodes for sub-0.15 μm Memory Device Application;Journal of The Electrochemical Society;2001
5. Characterization of PECVD Ti process and development of a plasma-less chlorine clean for process repeatability in advanced DRAM manufacturing;Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V;1999-09-03
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