Evaluation of wafer bonding and etch back for SOI technology-Reference-Cited by-同舟云学术

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Evaluation of wafer bonding and etch back for SOI technology

Published:1995-01 Issue:1-2 Volume:49 Page:91-124
ISSN:0165-5817
Container-title:Philips Journal of Research
language:en
Short-container-title:Philips Journal of Research

Author:

Baumgart Helmut,Letavic Theodore J.,Egloff Richard

Publisher

Elsevier BV

Subject

General Engineering

Reference42 articles.

1. Dependence of breakdown voltage on drift length and buried oxide thickness in SOI RESURF LDMOS transistors

2. Realization of high breakdown voltage (<700 V) in thin SOI devices

3. Semiconductor Wafer Bonding: Science, Technology and Applications;Arnold,1993

4. A Room Temperature 0.1 /spl mu/m CMOS on SOI

5. Semiconductor Wafer Bonding: Science, Technology and Applications;Hughes,1993

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Film Characterization of Low-Temperature Silicon Carbon Nitride for Direct Bonding Applications;ECS Journal of Solid State Science and Technology;2020-12-01

2. Thick-film silicon-on-insulator wafers preparation and properties;Handbook of Silicon Based MEMS Materials and Technologies;2020

3. Thick-Film SOI Wafers;Handbook of Silicon Based MEMS Materials and Technologies;2015

4. Thick-Film SOI Wafers;Handbook of Silicon Based MEMS Materials and Technologies;2010

5. Thin Transparent Single-Crystal Silicon Membranes Made Using a Silicon-on-Nitride Wafer;Journal of the Korean Physical Society;2008-08-14

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