Prospects for SiC electronics and sensors-Reference-Cited by-同舟云学术

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Prospects for SiC electronics and sensors

Published:2008-01 Issue:1-2 Volume:11 Page:16-21
ISSN:1369-7021
Container-title:Materials Today
language:en
Short-container-title:Materials Today

Author:

Wright Nick G.,Horsfall Alton B.,Vassilevski Konstantin

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference73 articles.

1. Properties of Silicon Carbide,1995

2. Silicon Carbide Power Devices;Baliga,2006

3. Silicon Carbide, Recent Major Advances;Choyke,2006

4. Silicon Carbide: Materials, Processing and Devices;Feng,2006

5. Technical Literature. Cree Research, Inc., USA

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1. Discrimination of dislocation in highly doped n-type 4H–SiC by combining electrochemical reaction and molten alkali etching;Materials Science in Semiconductor Processing;2024-12

2. MoSSe/Si9C15 heterojunction photodetectors with ultrahigh photocurrent and carrier mobility;Materials Science in Semiconductor Processing;2024-11

3. Analysis of the variation in mechanical properties of α- and β-SiC under high-temperature Si-ion irradiation;Ceramics International;2024-10

4. Synthesis of silicon carbide thin film as a source for white light emission;Optical Materials;2024-09

5. Design of Monolithically Integrated Temperature Sensors in 4H-SiC JFETs;Key Engineering Materials;2024-08-22

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