Single-electron charging effects in Si MOS devices-Reference-Cited by-同舟云学术

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Single-electron charging effects in Si MOS devices

Published:2001-01 Issue:1 Volume:9 Page:69-75
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Ferry D.K.,Khoury M.,Gerousis C.,Rack M.J.,Gunther A.,Goodnick S.M.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Single Charge Tunneling;Grabert,1991

2. Room-temperature single-electron memory

3. Fabrication and characterization of room temperature silicon single electron memory

4. Silicon single-electron quantum-dot transistor switch operating at room temperature

5. Conductance Oscillations Periodic in the Density of a One-Dimensional Electron Gas

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chaotic Behavior of Transistor Circuits;Understanding Complex Systems;2012

2. SECS: A New Single-Electron-Circuit Simulator;IEEE Transactions on Circuits and Systems I: Regular Papers;2008-10

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