Author:
Diehl L.,Dehlinger G.,Sigg H.,Gennser U.,Grützmacher D.,Müller E.,Faist J.,Ensslin K.,Sagnes I.,Campidelli Y.,Kermarrec O.,Bensahel D.
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. J. Faist, F. Capasso, C. Sirtori, D.L. Sivco, A.Y. Cho, in: H.C. Liu, F. Capasso (Eds.), Intersubband Transitions in Quantum Wells, Semiconductor and Semimetal, Vol. 66, Academic Press, London, 2000, (Chapter 1), and references therein.
2. Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures
3. E. Kasper, Properties of strained and relaxed Silicon Germanium, INSPEC 1995.
4. Crystal Interfaces. Part II. Finite Overgrowths
5. Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献