In situinvestigations of Si and Ge interdiffusion in Ge-rich Si/SiGe multilayers using x-ray scattering-Reference-Cited by-同舟云学术

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In situinvestigations of Si and Ge interdiffusion in Ge-rich Si/SiGe multilayers using x-ray scattering

Published:2007-03-19 Issue:4 Volume:22 Page:447-453
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Meduna M,Novák J,Bauer G,Holý V,Falub C V,Tsujino S,Grützmacher D

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Silicon-Germanium Strained Layer Materials in Microelectronics

2. Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures

3. Intersubband quantum cascades in the Si/SiGe material system

4. Stress and its effect on the interdiffusion in Si1−xGex/Si superlattices

5. Self-diffusion of 71Ge in Si–Ge

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Rapid Thermal Annealing on Ge-Si Interdiffusion in Epitaxial Multilayer Ge0.3Si0.7/Si Superlattices with Various GeSi Thicknesses;ECS Journal of Solid State Science and Technology;2018

2. Tailoring the soft magnetic properties of sputtered multilayers by microstructure engineering for high frequency applications;AIP Advances;2017-01-09

3. Germanium–tin interdiffusion in strained Ge/GeSn multiple-quantum-well structure;Journal of Physics D: Applied Physics;2016-05-04

4. Strain relaxation in Ge microcrystals studied by high-resolution X-ray diffraction;physica status solidi (a);2015-11-20

5. Three-dimensional Ge/SiGe multiple quantum wells deposited on Si(001) and Si(111) patterned substrates;Semiconductor Science and Technology;2015-08-11

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