Chemically vapor deposited Si nanowires nucleated by self-assembled Ti islands on patterned and unpatterned Si substrates-Reference-Cited by-同舟云学术

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Chemically vapor deposited Si nanowires nucleated by self-assembled Ti islands on patterned and unpatterned Si substrates

Published:2002-03 Issue:2-4 Volume:13 Page:995-998
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Kamins T.I,Stanley Williams R,Hesjedal T,Harris J.S

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Morphology and phase stability of TiSi2on Si

2. Correlation of morphology and electrical properties of nanoscale TiSi2 epitaxial islands on Si (001)

3. The incommensurate nature of epitaxial titanium disilicide islands on Si(001)

4. A Predictive Kinetic Model for the Chemical Vapor Deposition of TiSi2

5. Kinetics of TiSi2 Formation and Silicon Consumption during Chemical Vapor Deposition

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1. Influence of low energy (keV) negative Li ion implantation on properties of electrochemically induced scaffold-based growth of PbSe nanowires;Journal of Materials Science: Materials in Electronics;2018-12-18

2. Growth and thermal properties of doped monocrystalline titanium-silicide based quantum dot superlattices;Superlattices and Microstructures;2016-04

3. Effect of O5+ ion implantation on the electrical and structural properties of Cu nanowires;Journal of Radioanalytical and Nuclear Chemistry;2014-06-22

4. Ion-beam-induced bending of freestanding amorphous nanowires: The importance of the substrate material and charging;Applied Physics Letters;2013-05-27

5. The ion implantation-induced properties of one-dimensional nanomaterials;Nanoscale Research Letters;2013-04-17

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