The incommensurate nature of epitaxial titanium disilicide islands on Si(001)-Reference-Cited by-同舟云学术

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The incommensurate nature of epitaxial titanium disilicide islands on Si(001)

Published:2000-06 Issue:1-2 Volume:457 Page:147-156
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Briggs G.A.D.,Basile D.P.,Medeiros-Ribeiro G.,Kamins T.I.,Ohlberg D.A.A.,Stanley Williams R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference13 articles.

1. Morphological degradation of TiSi2on 〈100〉 silicon

2. Correlation of morphology and electrical properties of nanoscale TiSi2 epitaxial islands on Si (001)

3. Kinetics of TiSi2 Formation and Silicon Consumption during Chemical Vapor Deposition

4. A Predictive Kinetic Model for the Chemical Vapor Deposition of TiSi2

5. Reaction and Film Properties of Selective Titanium Silicide Low‐Pressure Chemical Vapor Deposition

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanometer-Range Strain Distribution in Layered Incommensurate Systems;Physical Review Letters;2012-12-26

2. Shape transition and migration of TiSi2 nanostructures embedded in a Si matrix;Journal of Applied Physics;2011-11

3. Charge Control of Surface Dangling Bonds Using Nanoscale Schottky Contacts;ACS Nano;2011-02-10

4. Initial growth of SrTiO3 on Sr/Si(001) studied by scanning tunneling microscope;Acta Physica Sinica;2011

5. Modification by H-termination in growth process of titanium silicide on Si(001)-2×1 observed with scanning tunneling microscopy;Applied Surface Science;2009-11

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