Transient modulated photocurrent studies in hydrogenated amorphous silicon: a new look at defect relaxation dynamics
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference30 articles.
1. Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopy
2. Phase‐shift analysis of modulated photocurrent: Its application to the determination of the energetic distribution of gap states
3. Spatially resolved and energy-resolved defect kinetics ina-Si:H: A comprehensive study by phase-shift analysis of modulated photocurrents
4. An evaluation of phase-shift analysis of modulated photocurrents
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2. Modulated photocurrents in a sandwich-cell structure: II. Influence of bias illumination intensity and carrier diffusion;Journal of Physics: Condensed Matter;2003-08-01
3. Modulated photocurrents in a sandwich-cell structure;Journal of Physics: Condensed Matter;2000-05-31
4. Time relaxation of space-charge-limited conductivity in a-Si:H;Journal of Non-Crystalline Solids;1998-05
5. Identification of the dominant electron deep trap in amorphous silicon from ESR and modulated photocurrent measurements: implications for defect models;Journal of Non-Crystalline Solids;1998-05
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