Identification of the dominant electron deep trap in amorphous silicon from ESR and modulated photocurrent measurements: implications for defect models-Reference-Cited by-同舟云学术

Identification of the dominant electron deep trap in amorphous silicon from ESR and modulated photocurrent measurements: implications for defect models

Published:1998-05 Issue: Volume:227-230 Page:348-352
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

David Cohen J,Kwon Daewon

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Phase‐shift analysis of modulated photocurrent: Its application to the determination of the energetic distribution of gap states

2. Spatially resolved and energy-resolved defect kinetics ina-Si:H: A comprehensive study by phase-shift analysis of modulated photocurrents

3. Measured and calculated distributions of deep defect states in hydrogenated amorphous silicon: Verification of deep defect relaxation dynamics

4. Improved defect-pool model for charged defects in amorphous silicon

5. Chemical equilibrium description of stable and metastable defect structures ina-Si:H

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