Hole mobility in pure and doped vapour-deposited As2S3
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference25 articles.
1. A simple ambipolar model for the electron-bombardment induced conductivity in amorphous arsenic trisulphide
2. Charge Transport and Photoconductivity in Amorphous Arsenic Trisulfide Films
3. Hole mobility in evaporated layers of As2S3.CdI2
4. Space-charge-free transients in single-carrier low-mobility solids
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Local structure and electronic properties of amorphous As2S3films prepared by different methods;Semiconductor Science and Technology;2004-05-19
2. Difference in transient transport behavior between amorphous inorganic and organic solids;Journal of Non-Crystalline Solids;1996-05
3. Relations between transient charge transport and the glass-transition temperature in amorphous chalcogenides;Physical Review B;1994-04-15
4. Hole transport in vapour-deposited As2S3;Journal of Physics C: Solid State Physics;1981-01-20
5. States in the gap in non-crystalline semiconductors;Journal of Physics C: Solid State Physics;1980-10-30
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