Hole transport in vapour-deposited As2S3
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/14/i=2/a=009/pdf
Reference40 articles.
1. Observation of Dipolar Activity in Amorphous Se and Some of Its As Alloys
2. A comparison of the structures of vapour-deposited and bulk arsenic sulphide glasses
3. An Analysis of the Dispersive Charge Transport in Vitreous 0.55 As2S3: 0.45 Sb2S3
4. Hole mobility in evaporated layers of As2S3.CdI2
5. Hole mobility in pure and doped vapour-deposited As2S3
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1. Electrical properties and local structure ofn-type conducting amorphous indium sulphide;Philosophical Magazine Letters;2004-10
2. Electronic structure and transport properties in the transparent amorphous oxide semiconductor2CdO⋅GeO2;Physical Review B;2002-07-16
3. Electronic transport and optical properties of proton-implanted amorphous 2CdO·GeO2 films;Journal of Non-Crystalline Solids;2000-09
4. Spectral dependence of photoexpansion in As2S3 glass;Philosophical Magazine Letters;1999-01
5. Free-carrier generation in amorphous semiconductors by intense subgap excitation;Applied Physics Letters;1998-12-07
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