Chemical modification of the properties of amorphous arsenic
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Electronic Structure of Amorphous Semiconductors;Adler;Phys. Rev. Lett.,1976
2. Optical and Electronic Properties of Modified Amorphous Materials;Flasck,1977
3. The Effect of Charged Additives on the Carrier Concentrations in Lone-pair Semiconductors;Fritzsche;Phil. Mag. B.,1978
4. Amorphous Arsenic;Greaves;Adv. Phys.,1979
5. Bonding bands, and Impurity States in Chalcogenide Semiconductors;Kastner;Phys. Rev. Lett.,1972
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A study of n-type conduction in amorphous chalcogenide sputtered films;Journal of Physics: Condensed Matter;1989-07-17
2. Structural studies of sputtered NiAsO films;Journal of Non-Crystalline Solids;1985-04
3. Chemical modification of amorphous arsenic;Solar Energy Materials;1982-11
4. REVIEW OF GROUP-V AMORPHOUS SEMICONDUCTORS;Le Journal de Physique Colloques;1981-10
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