Deep hole traps in high efficiency Shottky barrier solar cells on sputtered amorphous silicon as evidenced by spectral response and thermally stimulated current measurements-Reference-Cited by-同舟云学术

Deep hole traps in high efficiency Shottky barrier solar cells on sputtered amorphous silicon as evidenced by spectral response and thermally stimulated current measurements

Published:1980-01 Issue: Volume:35-36 Page:737-742
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Vieux-Rochaz L.,Chenevas-Paule A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Schottky‐barrier characteristics of metal–amorphous‐silicon diodes

2. Emploi de la réaction résonnante 1H(15N, αγ) pour l'obtention de profils de concentration d'hydrogène dans les matériaux

3. Proc. of the 1979 Photovoltaic Solar Energy conf.;Vieux-Rochaz,1979

4. to be published

5. Diodes Schottky et MIS tunnel sur silicium amorphe hydrogéné de qualité photovoltaïque préparé par pulvérisation cathodique Caractérisation électrique par mesures capacitives

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