A new method for detecting subtle changes in SiH bonds of a-Si:H-Reference-Cited by-同舟云学术

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A new method for detecting subtle changes in SiH bonds of a-Si:H

Published:1993-12 Issue: Volume:164-166 Page:211-214
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Kong G.L.,Zhang D.L.,Zhao Y.P.,Sun G.S.,Pan G.Q.,Liao X.B.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Hydrogen diffusion and electronic metastability in amorphous silicon

2. Light-enhanced hydrogen motion ina-Si:H

3. Carrier‐dependent hydrogen migration in hydrogenated amorphous silicon

4. Evidence of light‐induced bond breaking in hydrogenated amorphous silicon

5. Microscopic origin of light‐induced changes in hydrogenated amorphous silicon

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Light and annealing induced changes in Si–H bonds in undoped a-Si:H;Solid State Communications;2000-10

2. Light-Excited Structural Instability of a-Si:H;MRS Proceedings;1998

3. Light-Induced Change of Si-H Bond Absorption in Hydrogenated Amorphous Silicon;MRS Proceedings;1998

4. Evidence for Light-Induced Increase of Si-H Bonds in Undopeda-Si: H;Physical Review Letters;1995-01-23

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