Photoluminescence properties of a-(Si/SiN):H multilayers: A comparison with bulk alloys-Reference-Cited by-同舟云学术

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Photoluminescence properties of a-(Si/SiN):H multilayers: A comparison with bulk alloys

Published:1987-12 Issue: Volume:97-98 Page:883-886
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Hopkinson M.,Searle T.M.,LeComber P.G.,Gibson R.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Electrical, optical and luminescence properties of a-Si/SiN multilayers

2. Photoluminescence properties of a-SiNx: H alloys

3. The influence of preparation conditions on the hydrogen content of amorphous glow‐discharge silicon

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Preparation and characterization of amorphous SeTe/CdSe superlattices and their constituent thin layers;Thin Solid Films;1992-06

2. Studies of some photoluminescence properties of a-Si:H films;Materials Letters;1991-06

3. Static versus electron-phonon disorder in amorphous Si: H and its alloys;Philosophical Magazine B;1989-08

4. Amorphous-SiC thin-film p-i-n light-emitting diode using amorphous-SiN hot-carrier tunneling injection layers;IEEE Transactions on Electron Devices;1989

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