Recombination processes and optical bias in undoped a-Si:H
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference5 articles.
1. Transient quenching of CW luminescence in a-Si:H
2. The long-time drift mobility in aSi:H: Optical bias and temperature dependence
3. Disorder effects on deep trapping in amorphous semiconductors
4. Calculation of the extended-state electron mobility in hydrogenated amorphous silicon
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Method for the determination of the capture cross sections of electrons from space-charge-limited conduction in the dark and under illumination in amorphous semiconductors;Applied Physics Letters;2004-07-12
2. Relaxation of electrons following trapping in the space-charge-limited conduction regime of n + -i-n + hydrogenated amorphous silicon structures;Philosophical Magazine Letters;2002-05
3. Determination of the capture cross sections of electrons in undoped hydrogenated amorphous silicon from the photoconductivity of and space-charge relaxation in n+-i-n+structures; the role of light exposure and annealing;Journal of Physics: Condensed Matter;2001-05-31
4. Determination of the midgap density of states and capture cross-sections in polymorphous silicon by space-charge-limited conductivity and relaxation;Philosophical Magazine Letters;1999-09
5. Values of capture cross sections of metastable defects in hydrogenated amorphous silicon;Journal of Applied Physics;1996-02-15
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