Differential photocurrent transient measurements in a-Si:H
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Comparison of the dispersion parameters from time-of-flight and photo-induced midgap absorption measurements on sputtered a-Si:H
2. Study of gap states in hydrogenated amorphous silicon by transient and steady-state photoconductivity measurements
3. A physical interpretation of dispersive transport in disordered semiconductors
4. Transient photoconductivity and photo-induced optical absorption in amorphous semiconductors
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1. Interpreting transient photocurrents as a signature of the density of states distribution: the profound importance of the short-time decay;Journal of Non-Crystalline Solids;2000-05
2. Photocurrent and photoabsorption transients in amorphous solids in the presence of optical bias;Journal of Physics: Condensed Matter;1997-11-24
3. Optical-bias effect on transient electron-drift measurements ina-Si:H: Implications on the distribution and capture cross sections of the dangling bonds;Physical Review B;1996-06-15
4. Optical-bias effects in electron-drift measurements and defect relaxation ina-Si:H;Physical Review B;1993-09-15
5. Decay of photocurrent from the steady state ina-Si:H films;Physical Review B;1992-11-15
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