Optical-bias effect on transient electron-drift measurements ina-Si:H: Implications on the distribution and capture cross sections of the dangling bonds-Reference-Cited by-同舟云学术

Optical-bias effect on transient electron-drift measurements ina-Si:H: Implications on the distribution and capture cross sections of the dangling bonds

Published:1996-06-15 Issue:24 Volume:53 Page:R16133-R16136
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Longeaud C.,Kleider J. P.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.R16133/fulltext

Reference15 articles.

1. Improved defect-pool model for charged defects in amorphous silicon

2. Chemical equilibrium description of stable and metastable defect structures ina-Si:H

3. Distribution of light‐induced defect states in undoped amorphous silicon

4. Depth profiles of mobility lifetime products and capture cross-sections in a-Si:H

5. Photoconductivity spectroscopy of hydrogenated amorphous silicon

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1. Light-induced defects in hydrogenated amorphous silicon germanium alloys;Solar Energy Materials and Solar Cells;2003-07

2. Metastable Defects in the Amorphous Silicon-Germanium Alloys;MRS Proceedings;2003

3. Midgap density of states in hydrogenated polymorphous silicon;Journal of Applied Physics;1999-07-15

4. Properties of a new a-Si:H-like material: hydrogenated polymorphous silicon;Journal of Non-Crystalline Solids;1998-05

5. Identification of the dominant electron deep trap in amorphous silicon from ESR and modulated photocurrent measurements: implications for defect models;Journal of Non-Crystalline Solids;1998-05