Electronic and structural properties of the a-Si:H/a-SiNX:H interface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Electronic structure of hydrogenated and unhydrogenated amorphousSiNx (0≤x≤1.6): A photoemission study
2. Amorphous Heterostructures and Layer Structures;Abeles,1984
3. Photoemission studies of a-SiNx:H/a-Si:H heterojunctions
4. Electronic structure of silicon nitride and amorphous silicon/silicon nitride band offsets by electron spectroscopy
5. Determination of Band Discontinuity in Amorphous Silicon Heterojunctions
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2. Infrared modulation spectroscopy of interfaces in amorphous silicon solar cells;Journal of Non-Crystalline Solids;2002-04
3. Infrared Charge-Modulation Spectroscopy of Defects in Phosphorus Doped Amorphous Silicon;MRS Proceedings;2002
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