Influence of defects and temperature on the lifetime distribution of carriers in a-Si:H
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Luminescence and recombination in hydrogenated amorphous silicon
2. Electronic transport and recombination in amorphous semiconductors at low temperatures
3. Geminate recombination in a-Si:H
4. Lifetime distribution of the photoluminescence of a-Si:H and a-Si1−xCx:H
5. Influence of nonradiative and nongeminate processes on a lifetime distribution of photoexcited carriers in amorphous semiconductors at low temperatures
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1. Light-induced effects on the radiative recombination rate of electron-hole pairs in a-Si:H;physica status solidi (c);2011-05-02
2. Electronic processes in amorphous semiconductors;Journal of Materials Science: Materials in Electronics;2003
3. Excitonic contribution to photoluminescence in amorphous semiconductors;PHILOS MAG B;2002
4. Excitonic contribution to photoluminescence in amorphous semiconductors;Philosophical Magazine B;2002-05
5. Lifetime and intensity of photoluminescence after light induced creation of dangling bonds in a-Si:H;Journal of Non-Crystalline Solids;2002-04
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