The electron spin resonance lineshape in hydrogenated amorphous silicon germanium alloys
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Defects in Amorphous Silicon: A New Perspective
2. Quantitative analysis of EPR and electron-nuclear double resonance spectra ofDcenters in amorphous silicon: Dangling versus floating bonds
3. Analysis of the superhyperfine structure and thegtensor of defects in amorphous silicon
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1. Electron emission from deep traps in hydrogenated amorphous silicon and silicon-germanium: Meyer-Neldel behavior and ionization entropy;MRS Proceedings;2011
2. Electron spin resonance in laser-crystallized polycrystalline silicon-germanium thin films;physica status solidi (a);2010-03
3. Variation of spin densities and the solid-phase crystallization of amorphous Si1−xGex:H films;Journal of Applied Physics;2001-09-15
4. The solid-phase crystallization mechanism of hydrogenated amorphous silicon–germanium alloy films;Journal of Non-Crystalline Solids;2000-07
5. Defects in amorphous Si 1 − x Ge x alloys: An explanation of electron spin resonance signals;Europhysics Letters (EPL);1997-10-15
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