Study of the electronic structure of a-Si1-yNiy:H alloys by XPS and XES
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference26 articles.
1. Free-carrier behaviour in a-Si1−yNiy:H
2. Proc. 4th Int. Conf. on Hopping and Related Phenomena;Abkemeier,1992
3. Conductivity and magnetoresistance of hydrogenated amorphous silicon-nickel alloys near the metal-insulator transition
4. OJDOS evidence for a semiconductor-to-metal transition in a-Si1-yNiy:H
5. Structural study of amorphous Si1-yNiy:H alloys by EXAFS and infrared spectroscopy
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2. XPS calibration study of thin-film nickel silicides;Surface and Interface Analysis;2009-06
3. Metal-insulator transition in amorphousSi1−xNix:Evidence for Mott’s minimum metallic conductivity;Physical Review B;1999-11-15
4. Electronic Structure and Electrical Conductivity of Amorphous Ni–Si Alloy Films;Journal of the Physical Society of Japan;1997-07-15
5. Investigation of argon ion bombarded Re x Si 1-x thin film composites by XPS, SEM and AES;Fresenius' Journal of Analytical Chemistry;1997-05-21
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