Oxygen-rich phase segregation in PECVD a-SiOx:H semi-insulators-Reference-Cited by-同舟云学术

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Oxygen-rich phase segregation in PECVD a-SiOx:H semi-insulators

Published:1995-07 Issue: Volume:187 Page:86-90
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Suchaneck G.,Steinke O.,Alhallani B.,Schade K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Electron Transport in Oxygenated Amorphous Hydrogenated Silicon Prepared by Reactive Sputtering

2. Oxygen-bonding environments in glow-discharge-deposited amorphous silicon-hydrogen alloy films

3. Infrared spectroscopic study of SiOx films produced by plasma enhanced chemical vapor deposition

4. Structural Analysis by Infrared and X‐Ray Photoelectron Spectroscopy of Amorphous Silicon Produced by Plasma‐Deposition

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Determination of the oxygen content in amorphous SiOx thin films;Journal of Non-Crystalline Solids;2019-08

2. Dispersion Homogeneity and Electrochemical Performance of Si Anodes with the Addition of Various Water-Based Binders;Journal of The Electrochemical Society;2018

3. Formation of Nanocomposites by Oxidizing Annealing of SiO x and SiO x Films: Ellipsometry and FTIR Analysis;Nanoscale Research Letters;2015-05-27

4. Properties of Si quantum dot/SiOx porous film structures synthesized using hydrogen fluoride technology;Modern Electronic Materials;2015-03

5. Microstructure of a-SiOx:H;Science China Mathematics;2002-10

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