Electrical properties of Au/Bn/InP MIS diodes-Reference-Cited by-同舟云学术

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Electrical properties of Au/Bn/InP MIS diodes

Published:1995-07 Issue: Volume:187 Page:409-414
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Baehr O.,Barrada M.,Bath A.,Lepley B.,Thévenin P.,Schoonman J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Plasma enhanced chemical vapour deposition of boron nitride onto InP

2. Metal‐insulator‐semiconductor diodes fabricated on InP, InGaAsP, and InGaAs

3. Effects on InP surface trap states ofinsituetching and phosphorus‐nitride deposition

4. Interface studies and electrical properties of plasma sulfide layers onn‐type InP

5. Interface Properties of InP ‐ Dielectric Systems

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Controlling the electrical characteristics of Au/n-Si structures by interfacial insulator layer;Materials Science in Semiconductor Processing;2012-08

2. Study of the hBN/InP interface by deep level transient and photoluminescence spectroscopies;Thin Solid Films;2008-04

3. Admittance analysis of an MIS structure made with PECVD deposited a-SiNx:H thin films;Journal of Non-Crystalline Solids;1999-07

4. Electrical properties of MIS structures with BN insulating layer;Diamond and Related Materials;1998-06

5. Characterization of phosphorus oxinitride (PON) gate insulators for InP metal-insulator-semiconductor devices;Thin Solid Films;1997-11

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