Design of CNFET based power- and variability-aware nonvolatile RRAM cell-Reference-Cited by-同舟云学术

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Design of CNFET based power- and variability-aware nonvolatile RRAM cell

Published:2019-04 Issue: Volume:86 Page:7-14
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Pal Soumitra^ORCID,Gupta Vivek^ORCID,Islam Aminul

Publisher

Elsevier BV

Subject

General Engineering

Reference45 articles.

1. “Memristor – the missing circuit element;Chua;IEEE Trans. Circuit Theory,1971

2. Cell design and comparative evaluation of a novel 1T memristor-based memory;Sakode;IEEE/ACM Int. Symp. Nanoscale Archit.,2012

3. Variability analysis of 6T and 7T sram cell in sub-45nm technology;Islam;IIUM Eng. J.,2011

4. A Transmission Gate Based 9T SRAM Cell for Variation Resilient Low Power and Reliable IoT Applications;Pal,2019

5. Adaptive synchronization of fractional-order memristor-based neural networks with multiple time-varying delays;Wang;IEEE Trans. Neural Networks Learn. Syst.,2015

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Diverse synaptic weight adjustment of bio-inspired ZrOx-based memristors for neuromorphic system;Materials Science in Semiconductor Processing;2023-04

2. Comparative analysis and robustness study of logic styles;Microsystem Technologies;2022-10-11

3. Radiation‐hardened read‐decoupled low‐power 12T SRAM for space applications;International Journal of Circuit Theory and Applications;2021-07-15

4. Design of SRAM cell for low power portable healthcare applications;Microsystem Technologies;2020-03-14

5. A highly stable reliable SRAM cell design for low power applications;Microelectronics Reliability;2020-02

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