A new analytical modelling of 10 nm negative capacitance-double gate TFET with improved cross talk and miller effects in digital circuit applications-Reference-Cited by-同舟云学术

A new analytical modelling of 10 nm negative capacitance-double gate TFET with improved cross talk and miller effects in digital circuit applications

Published:2023-03 Issue: Volume:133 Page:105689
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Mukherjee Adrija,Debnath Papiya,Nirmal D.,Chanda Manash

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference26 articles.

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3. Impact of total and partial dipole switching on the switching slope of gate-last negative capacitance FETs with ferroelectric hafnium zirconium oxide gate stack;Sharma;2017 Symposium on VLSI Technology,2017

4. Enhancement and modeling of drain current in negative capacitance double gate TFET;S;Silicon,2022

5. Does source-to-drain tunneling limit the ultimate scaling of MOSFETs?;Wang;Digest. IEDM,2002

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