A new two-dimensional C–V model for prediction of maximum frequency of oscillation (fmax) of deep submicron AlGaN/GaN HEMT for microwave and millimeter wave applications-Reference-Cited by-同舟云学术

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A new two-dimensional C–V model for prediction of maximum frequency of oscillation (fmax) of deep submicron AlGaN/GaN HEMT for microwave and millimeter wave applications

Published:2008-12 Issue:12 Volume:39 Page:1634-1641
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Tyagi Rajesh K.,Ahlawat Anil,Pandey Manoj,Pandey Sujata

Publisher

Elsevier BV

Subject

General Engineering

Reference28 articles.

1. Emerging gallium nitride based devices;Mohammad;Proc. IEEE,1995

2. Gallium nitride: past, present and future;Yoder;Int. Electron Devices Meet.Tech.Dig.,1997

3. GaN based transistors for high power applications;Shur;Solid State Electron.,1998

4. GaN based microwave power HEMTs;Mishra;in Proceedings of the International Physics of Semiconductor .Devices Workshop,1998

5. Application of GaN based heterojunction FETs for advanced wireless communication;Ohno;IEEE Trans. Electron. Devices,2001

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1. Noise in Semiconductor Devices;Synthesis Lectures on Engineering, Science, and Technology;2023-10-17

2. Analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N DH-HEMT for RF and Microwave Frequency Applications;Semiconductors;2019-12

3. Noise Analysis of Sub Quarter Micrometer AlGaN/GaN Microwave Power HEMT;JSTS:Journal of Semiconductor Technology and Science;2009-09-30

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