Photoluminescence in n and p modulation-doped GaInNAs/GaAs quantum wells
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference8 articles.
1. In situ annealing effect on the structural properties of near-surface GaInNAs/GaAs quantum wells;Liu;J. Cryst. Growth,2004
2. Annealing in GaInNAs system;Kondow;J. Phys.: Condens. Matter,2004
3. The role of Sb in the molecular beam epitaxy growth of 1.30–1.55μm wavelength GaInNAs/GaAs quantum well with high indium content;Wu;J. Cryst. Growth,2006
4. Effect of nonradiative recombination on carrier dynamics in GaInNAs-GaAs quantum wells;Sun;Chin. Phys. Lett.,2006
5. Photoluminescence of InNAs alloys: S-shaped temperature dependence and conduction-band nonparabolicity;Merrick;Phys. Rev. B,2007
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Quantum oscillations and interference effects in strained n- and p-type modulation doped GaInNAs/GaAs quantum wells;Journal of Physics D: Applied Physics;2015-07-03
2. Optimisation of optical properties of a long-wavelength GaInNAs quantum-well laser diode;Quantum Electronics;2013-11-30
3. Contactless electron effective mass determination in GaInNAs/GaAs quantum wells;The European Physical Journal B;2012-12-26
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