A compact C–V model for 120nm AlGaN/GaN HEMT with modified field dependent mobility for high frequency applications
Author:
Publisher
Elsevier BV
Subject
General Engineering
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1. Analytical Modeling and Simulation-Based Investigation of AlGaN/AlN/GaN Bio-HEMT Sensor for C-erbB-2 Detection;IEEE Sensors Journal;2018-12-01
2. Effect of Surface Passivation on the Electrical Characteristics of Nanoscale AlGaN/GaN HEMT;IOP Conference Series: Materials Science and Engineering;2017-08
3. A DC analytical AlGaN/GaN HEMT model for transistor characterisation;2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON);2016-05
4. The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs;IEEE Transactions on Electron Devices;2012-05
5. DC and RF performance of an In0.1Ga0.9N/InN high electron mobility transistor;physica status solidi (c);2011-06-07
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