Analysis and simulation of Single Electron Transistor as an analogue frequency doubler-Reference-Cited by-同舟云学术

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Analysis and simulation of Single Electron Transistor as an analogue frequency doubler

Published:2018-05 Issue: Volume:75 Page:52-60
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Eskandarian A.^ORCID,Rajeyan Z.,Ebrahimnezhad H.

Funder

Islamic Azad University

Publisher

Elsevier BV

Subject

General Engineering

Reference21 articles.

1. The single electron transistor and artificial atoms;Kastner;Ann. Phys.,2000

2. Single-Electron devices and their applications;Likharev;Proc. IEEE,1999

3. Analysis of energy quantization effects on single electron transistor circuits;Dan;IEEE Trans. Nanotechnol.,2010

4. Single electron transistor theory: a review;Singh,2013

5. MOSES: a general Monte Carlo simulator for single-electronic circuits;Chen;Electrochem. Soci.,1996

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Detailed Study on Single Electron Transistors in Nano Device Technologies;Advances in Computer and Electrical Engineering;2022-12-16

2. A Single Electron Transistor-Based Floating Point Multiplier Realization at Room Temperature Operation;Lecture Notes in Electrical Engineering;2022-12-04

3. Single-electron transistor: review in perspective of theory, modelling, design and fabrication;Microsystem Technologies;2020-09-03

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