Author:
Udar Prajvi,Goel Anubha,Gupta R.S.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. Nanoscale Transistors: Device Physics, Modelling and Simulation;Lundstrom,2006
2. Threshold voltage modeling under size quantization for ultra-thin silicon double-gate metal-oxide-semiconductor field-effect transistor;Medury;Journal of Applied Physics,2012
3. Compact Modelling of a Generic Double-Gate MOSFET with GateS/D Underlap for Subthreshold Operation”;Vaddi,2012
4. Accounting for Quantum Effects and Poly-Silicon Depletion from Weak to Strong Inversion in a Charge-Based Design Oriented MOSFET Model;Lallement,2003
5. Compact analytical model of double gate junction-less field effect transistor comprising quantum-mechanical effect;Gupta;J. Semiconduct., 36.2 (2015): 024001,2015
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