Electric field-enhanced metal-induced lateral crystallization and P-channel poly-Si TFTs fabricated by it

Author:

Zeng Xiangbin,Wang Huijuan,Sun Xiaowei,Li Junfeng

Publisher

Elsevier BV

Subject

General Engineering

Reference13 articles.

1. Microstructural characterization of solid-phase crystallized amorphous silicon films recrystallized using an excimer laser;Giust;J. Appl. Phys. Lett.,1997

2. Rapid joule heating of metal films used to fabricate polycrystalline silicon thin film transistors;Yoshiyasu;J. Appl. Phys.,2002

3. New excimer laser recrystallization of poly-Si for effective grain growth and grain boundary arrangement;Jae-Hong;J. Appl. Phys.,2000

4. Low-temperature poly-Si TFT technology;Ibaraki;SID 99 Dig.,1999

5. Excimer laser and rapid thermal annealing stimulation of solid-phase nucleation and crystallization in amorphous silicon films on glass substrate;Efremov;J. Phys. Condens. Matter,1996

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