Effect of deposition methods on dielectric breakdown strength of PECVD low-k carbon doped silicon dioxide dielectric thin films

Author:

Zhou H.,Shi F.G.,Zhao B.,Yota J.

Publisher

Elsevier BV

Subject

General Engineering

Reference24 articles.

1. P. Sermon, K. Beekmann, S. McClatchie, Low-k dielectrics for future IC fabrication, Semiconductor Fabtech, 11th ed.

2. ILD thermal stability in deep-submicron technologies: from thin to ultrathin dielectric films;Hsu;Proceedings of the SPIE Conference on Multilevel Interconnect Technology III,1999

3. Thickness dependent dielectric properties of low-k materials: a theoretical model;Hsu;Proceedings of the Fourth International Symposium of Low and High Dielectric Constant Materials: Materials Science, Processing, and Reliability Issues, Seattle, WA, May 2000, 99-7,2000

4. D.T. Hsu, F.G. Shi, B. Zhao, M. Brongo, Theory for the thickness dependent glass transition temperature of amorphous polymer thin films. In: Proceedings of the Fourth International Symposium of Low and High Dielectric Constant Materials: Materials Science, Processing, and Reliability Issues, Seattle, WA, May 2000, 99-7, pp. 53–61.

5. H.K. Kim, F.G. Shi, B. Zhao, M. Brongo, Low-k dielectrics for ULSI multilevel interconnections: thickness dependent electrical and dielectric properties. Conference Record of the 2000 IEEE International Symposium on Electrical Insulation, Piscataway, NJ, USA, 2000, pp. 269–271.

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