1. The Field Stop IGBT (FS IGBT). A new power device concept with a great improvement potential;Laska,2000
2. A 4500 V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor;Kitagawa,1993
3. Carrier stored trench-gate bipolar transistor (CSTBT)-a novel power device for high voltage application;Takahashi,1996
4. A novel diode-clamped CSTBT with ultra-low on-state voltage and saturation current;Li,2016
5. Optimization of the specific on-resistance of the COOLMOSTM;Chen;IEEE Trans. Electron. Dev.,2001