Design and investigation of double-RESURF SOI-LIGBT with carrier-storage layer in P-top-Reference-Cited by-同舟云学术

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Design and investigation of double-RESURF SOI-LIGBT with carrier-storage layer in P-top

Published:2024-05 Issue: Volume:147 Page:106177
ISSN:1879-2391
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Shen Zhigang,Liao Pengfei,Yu Qisheng,Huang Jiaweiwen,Zhang Aohang,Chen Wensuo^ORCID

Funder

Natural Science Foundation Project of Chongqing

Natural Science Foundation of Chongqing Municipality

Publisher

Elsevier BV

Reference26 articles.

1. Analysis of the lateral insulated gate transistor;Simpson,1985

2. Integrated smart power circuits technology, design and application;Pribyl,1996

3. High voltage, high speed lateral IGBT in thin SOI for power IC;Leung,1996

4. Lateral IGBT in thin SOI for high voltage, high speed power IC;Leung;IEEE Trans. Electron. Dev.,1998

5. High-voltage integrated circuits: History, state of the art, and future prospects;Disney;IEEE Trans. Electron. Dev.,2017

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