Modeling and performance study of nanoscale double gate junctionless and inversion mode MOSFETs including carrier quantization effects-Reference-Cited by-同舟云学术

Modeling and performance study of nanoscale double gate junctionless and inversion mode MOSFETs including carrier quantization effects

Published:2014-09 Issue:9 Volume:45 Page:1220-1225
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Holtij Thomas,Graef Michael,Kloes Alexander,Iñíguez Benjamín

Funder

German Federal Ministry of Education and Research

German Research Foundation (DFG)

European Commission under FP7

SQWIRE

Spanish Ministerio de Ciencia y Tecnología

PGIR/15

Publisher

Elsevier BV

Subject

General Engineering

Reference16 articles.

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4. T. Holtij, M. Graef, F. Hain, A. Kloes, B. Iniguez, Unified charge model for short-channel junctionless double gate MOSFETs, in: Mixed Design of Integrated Circuits and Systems (MIXDES), 2013 Proceedings of the 20th International Conference, 2013, pp. 75–80.

5. T. Holtij, M. Graef, F.M. Hain, A. Kloes, B. Iniguez, Compact model for short-channel junctionless accumulation mode double gate MOSFETs, IEEE Transactions on Electron DevicesEarly Access. http://dx.doi.org/10.1109/TED.2013.2281615 URL 〈http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=6616582〉

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