Surface Potential-Based Analytical Modeling of Electrostatic and Transport Phenomena of GaN Nanowire Junctionless MOSFET
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9172152/09158494.pdf?arnumber=9158494
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analytical Model for Cylindrical Junctionless Nanowire FETs;2024 IEEE 15th Latin America Symposium on Circuits and Systems (LASCAS);2024-02-27
2. Highly Linear and Low Noise Shell Doped GaN Junctionless Nanotube TeraFET for the Design of Ultra-Wideband LNA in 6G Communications;IEEE Transactions on Nanotechnology;2024
3. Numerical simulation and characterization of high-power gallium nitride based Junctionless Accumulation Mode Nanowire FET (GaN-JAM-NWFET) for small signal high frequency terahertz applications;AEU - International Journal of Electronics and Communications;2024-01
4. High-K Spacer Gate Stack Engineered, Dual Metal Underlap Junction-less GaN Gate All Around (HKS-GSE-DMUL-JGaNGAA) MOSFET for High Frequency Applications;2022 IEEE 19th India Council International Conference (INDICON);2022-11-24
5. Tracking electronic band alignment across 2D bridge-channel MoS2 during charge transport;Applied Physics Letters;2022-07-04
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