Study of GaAs layers grown on Ge substrates by MOVPE and in situ monitored by laser reflectometry-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Study of GaAs layers grown on Ge substrates by MOVPE and in situ monitored by laser reflectometry

Published:2004-02 Issue:2 Volume:35 Page:179-184
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Rebey A,Habchi M.M,Benzarti Z,El Jani B

Publisher

Elsevier BV

Subject

General Engineering

Reference23 articles.

1. Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy

2. Heterojunctions and Metal–Semiconductor Junctions;Milnes,1972

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of in situ thin films epitaxy by reflectance spectroscopy: Effect of growth parameters;Superlattices and Microstructures;2019-07

2. Analysis of the VIS–NIR spectral reflectance of Bi/GaAs structures grown by MOVPE and UHVE;Journal of Crystal Growth;2014-06

3. Simulation of in situ reflectance-time during MOVPE of GaN on sapphire substrate;Superlattices and Microstructures;2013-12

4. Optical properties study of In.08Ga.92As/GaAs using spectral reflectance, photoreflectance and near-infrared Photoluminescence;Superlattices and Microstructures;2013-07

5. In Situ Spectral Reflectance Investigation of InAs/GaAs Heterostructures Grown by MOVPE;Journal of Electronic Materials;2011-11-19

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP