1. Drain extended tunnel FET‒A novel power transistor for RF and switching applications;Shrivastava;IEEE Trans. Electron. Dev.,2017
2. A novel Si tunnel FET with 36mV/dec subthreshold slope based on junction depleted-modulation through striped gate configuration;Huang,2012
3. Demonstration of L-shaped tunnel field-effect transistors;Kim;IEEE Trans. Electron. Dev.,2016
4. Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) with record high drive currents and ≪60mV/dec subthreshold slope;Krishnamohan,2008
5. Effect of drain doping profile on double-gate tunnel field-effect transistor and its influence on device RF performance;Vijayvargiya;IEEE Trans. Nanotechnol.,2014